In this method, a low-k material used in the top LSI wiring layer is used in the process of encapsulating a certain MEMS device in a movable part into a hole. It can also be said to be the technology that closes the inherent packaging process of MEMS components to the existing CMOS manufacturing process. It can be manufactured using TSMC's production line.
Applying low-k materials to advanced LSIs is to utilize low dielectric properties and suppress the bonding between layers to achieve high-speed transmission wiring. When used in MEMS packaging, it uses porous features.
Specifically, the porous properties are applied to the sacrificial layer etching. In general, the packaging of the MEMS device is to form holes around the MEMS portion. A cover is provided on the cavity to cover the previously formed sacrificial layer, and a gap is provided on this cover to etch the sacrificial layer. When the porous material is used as the cover, the sacrificial layer can be removed by vapor phase etching. Further, a film of a non-porous material was formed on the top to achieve a hermetically sealed package.
Using HF during vapor phase etching, the etching rate of the porous material was only 0.14 nm/minute. Therefore, the silicon dioxide of the sacrificial layer has sufficient selectivity for the porous material. For example, if the porous density is only 7%, the hermetically sealed material will not be able to enter the cavity. In addition, the low-k material used this time is “Black Diamond†of Applied Materials.
The company plans to first apply this packaging technology to the packaging of silicon oscillators. Silicon oscillators have been developed for RF circuits and were published in the "IEDM 2007" in December 2007.
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